该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
本文着眼于使用计算流体力学方法对带有竖直吸水管、正向进水的开敞式前池与进水池的流态进行数值模拟。
In this paper the open sump flow with vertical intake is simulated with calculation fluid dynamics method according to model-test reports of Lianhu pump station.
开绝对温度单位，等于水的三态点绝对温度的1／273。16。这个单位等于一摄氏度。
A unit of absolute temperature equal to1/273.16 of the absolute temperature of the triple point of water. This unit is equal to one Celsius degree.
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