The invention discloses a vertical transistor with high magnification based on organic semiconductor materials.
本发明公开了一种基于有机半导体材料的高放大倍率的垂直型晶体管。
Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.
主要结论为通过合理地安排工艺步骤，能够在对原有结构不产生影响的情况下，得到性能令人满意的纵向PN P晶体管。
There are provided a vertical MOS transistor and a method of manufacturing the same.
提供一种垂直MOS晶体管及其制造方法。
Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.
本发明的实施例涉及作为发光晶体管的纵向场效应晶体管。
Capacitor, transistor, the transistor, LED lights, key switch, resistor, connectors, wire, potentiometers, fuse blocks, fuse, and other vertical Tape packaging materials.
元件种类components Kind电容器、晶体管、三极管、LED灯、按键开关、电阻、连接器、线圈、电位器、保险丝座、熔断丝等立式编带封装料。
Capacitor, transistor, the transistor, LED lights, key switch, resistor, connectors, wire, potentiometers, fuse blocks, fuse, and other vertical Tape packaging materials.
元件种类components Kind电容器、晶体管、三极管、LED灯、按键开关、电阻、连接器、线圈、电位器、保险丝座、熔断丝等立式编带封装料。
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