The invention discloses a vertical transistor with high magnification based on organic semiconductor materials.
本发明公开了一种基于有机半导体材料的高放大倍率的垂直型晶体管。
Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.
主要结论为通过合理地安排工艺步骤,能够在对原有结构不产生影响的情况下,得到性能令人满意的纵向PN P晶体管。
There are provided a vertical MOS transistor and a method of manufacturing the same.
提供一种垂直MOS晶体管及其制造方法。
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