The design of a new kind of UV or DUV lithography lenses is described in this paper.
设计了一种新的紫外或深紫外光刻物镜。
The 2-d simulation of thick SU-8 photoresist profile after UV lithography is presented.
这篇论文是厚su - 8光刻胶接触式UV光刻后形貌的两维模拟。
UV lithography, silicon etching and soft lithography were adopted to fabricate micropillar arrayed cell culture substrates.
以紫外光光刻、硅蚀刻及软光刻技术制备了微柱阵列型细胞培养基底。
Therefore, such factors having effect on the precision of deep UV lithography as diffraction effect, exposure dosage, wavelength and distribution of fly's eyes lens etc.
同时由于紫外光的衍射效应，获得高精度的大高宽比结构并不容易。本文深入研究了影响紫外深度光刻图形转移精度的如下因素；
For the removal of residual layer after template is released during nanoimprint lithography, a new UV-nanoimprint technology without residual layer based on photolithography mask was proposed.
针对纳米压印光刻技术中压印脱模后的留膜去除问题，提出了一种基于光刻版的无留膜紫外纳米压印技术。
Third, laser crystals emitting at UV and visible regions for color displaying and optical lithography.
面向全色显示、光刻等应用的蓝绿紫和可见光激光晶体；
To give an error analysis of this effect, the propagation of partial coherent light in the proximity UV-lithography was investigated and the relative theoretical model was proposed.
为此，研究了接近式紫外光刻中部分相干光的传播过程，建立了相应的光刻理论模型，对光刻成像中的误差产生机理进行分析。
The lithography room is lit with yellow light to avoid interference with the UV light used with the photomasks.
平板印刷室里面点着黄色的灯，避免光掩膜与紫外线相互干扰。
The lithography room is lit with yellow light to avoid interference with the UV light used with the photomasks.
平板印刷室里面点着黄色的灯，避免光掩膜与紫外线相互干扰。
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