The emission threshold voltage can thus be decreased.
降低发射阈值电压。
A disadvantage is in the increased threshold voltage.
缺点是使阈值电压升高。
The transistor element comprises a predefined threshold voltage.
晶体管元件包括预定的阈值电压。
A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
In addition, the threshold voltage is capable of being finely tuned with a proper gate bias .
除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临限电压。
Our results showed that Fick's second law can successfully explain the variations of threshold voltage.
不论是在有无偏压实验条件下，气体扩散模型可以成功解释氨在五苯环薄膜中的扩散行为。
Based on thus obtained model, the threshold voltage can be predicted and can be used for circuit design.
根据获得的模型，该门限电压可以预测并且可以用于电路设计。
The threshold voltage is positive after a program operation, in what may be defined as the logic "0" state.
在编程操作之后阈值电压为正，其可界定为逻辑“0”状态。
The temperature compensated reference voltage stabilizes the lockout threshold voltage and hysteresis quality.
通过对自产生的基准电压进行温度补偿确保了锁定阈值电压和迟滞量稳定。
Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.
相应地，该晶体管的阈值电压及栅源极电压也可降低。
In the case of storing multiple states of data, the threshold voltage window is divided into the number of states.
在存储多个数据状态的情况下，阈值电压窗被划分为状态的数目。
A read voltage is changed by the shifted threshold voltage level to read user data using the changed read voltage.
以及利用偏移阈电压电平改变读取电压，以使用改变的读取电压读取用户数据。
A modified algorithm for evaluation of the threshold voltage in MOSFET with non-uniformly doped substrate is presented.
提出一种改进了的计算衬底非均匀掺杂mos器件开启电压的算法。
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
When it reaches the threshold voltage of the reset chip, it then asserts the reset once it reaches the time-out period of the chip.
当达到复位芯片的阈值电压时，一旦达到芯片的延时时间便输出复位信号。
A pixel for compensating for the threshold voltage of a drive transistor and the voltage drop of a first power source are provided.
所述像素用于补偿驱动晶体管的阈值电压和第一电源的压降。
The result shows that the motion threshold voltage declines due to the PTFE spacer, and is affected obviously by the spacer shapes.
结果表明，PTFE绝缘子的存在降低了微粒运动起始电压，而且绝缘子的形状也会影响绝缘子附近微粒运动的起始电压。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.
在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。
The simulation shows that the expression of threshold voltage for SOI structure, using depletion approximation, is very simple and more accurate.
模拟计算还表明，对于薄硅膜的SOI结构，用耗尽 层近似推出的阈电压公式是一个简单和比较准确的公式。
Its function is to provide a latching switch action upon sensing an input threshold voltage, with reset accomplished by an external clock signal.
它的功能是当感应到输入电压界限时提供一个锁存开关，通过外部时钟信号完成复位。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
One new domino logic circuit whose architecture is based on full PMOS sleep transistors and a dual threshold voltage CMOS technology is introduced.
介绍一种全部由PMOS休眠管实现的双阈值电压多米诺逻辑电路。
The influence of decomposition temperature on the threshold voltage is consistent with the principle of material design of thermochemical hole burning.
理论分析表明，阈值电压对热分解温度的依赖关系反映了活化能对热化学烧孔反应速度的影响。
The comparison logic compares a threshold voltage of a memory cell to at least one pair of fractional reference voltages to generate comparison results.
比较逻辑比较存储单元的阈值电压与至少一对分数参考电压，以生成比较结果。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
Then , an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects.
给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。
By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
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