The radiation mobility shift model and threshold voltage model of the non-uniform channel DMOS are proposed.
提出非均匀沟道DMOS辐照迁移率和阈值电压模型。
参考来源 - 非均匀沟道DMOS基本参数及其辐照理论的研究The n-ZnO/AlGaN/p-GaN heterojunction presents a representative current rectification property with the threshold voltage of 15V. The emitting light is relatively strong near-Ultraviolet.
该异质结结构也表现出典型的二极管整流特性,正向开启电压为15V左右,发射较强的近紫外光。
参考来源 - 基于GaN、ZnO材料异质结发光器件的制备与研究With the development of integrate circuits and increasing of the integration, the research of the threshold voltage uniformity is becoming more and more important.
随着GaAs集成电路的发展,集成度的提高,对GaAs单晶阈值电压均匀性的要求越来越高。
参考来源 - GaAs阈值电压均匀性与测试系统的研究·2,447,543篇论文数据,部分数据来源于NoteExpress
以上来源于: WordNet
The emission threshold voltage can thus be decreased.
降低发射阈值电压。
We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
推导了了一个短沟道MOST阈值电压温度系数表达式;
Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
这种晶体管的阈值电压窗口约17伏,且具有不破坏的读出特性。
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