TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。
A control gate having a thin gate oxide film is formed over a center channel portion of the channel region.
在沟道区的中央沟道部分上形成具有薄的栅氧化物膜的控制栅。
Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
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