When the characteristic size reach micron, submicron degree, overcoming the "limit" binding in order to increase the integration of device.
当特征尺寸进入到微米、亚微米量级时，需要克服“极限”束缚，增加器件的集成度。
The experimental results show that submicron level plane positioning accuracy can be achieved by the precision positioning device based on laser Moire signal.
实验结果表明，基于激光莫尔信号的精密定位装置可获得亚微米级的平面定位精度。
This paper presents the building procedures of hydrodynamic model for submicron semiconductor device simulation.
主要讨论了亚微米半导体器件模拟的流体动力学模型方程的建立过程。
This paper presents the building procedures of hydrodynamic model for submicron semiconductor device simulation.
主要讨论了亚微米半导体器件模拟的流体动力学模型方程的建立过程。
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