The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs).
应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。
All byte wide memories have standard SRAM pinouts. they operate like SRAMs and provide nonvolatile storage with no requirement for battery backup.
所有字节宽度的存储器都有标准SRAM脚位输出，他们操作方式跟SRAM一样，并且提供非易失性存储，无需后备电池。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
Structural radar absorbing materials (SRAMs) can not only absorb microwave but also bear loading, which are usually made up of matrix resin and microwave-absorber.
结构型雷达吸波材料（RAM）是一种兼具吸波与承载功能的材料，一般由吸波剂与基体树脂复合而成。
Single Hard Errors and functional error were observed in SRAMs under proton irradiation. The explanation is reasonable for the relation between SHE and device integration scale.
实验观察到质子也可以导致存储器出现单个位的硬错误和器件功能错误，并对单个位的硬错误与器件集成度的关系提出了合理的解释。
Single Hard Errors and functional error were observed in SRAMs under proton irradiation. The explanation is reasonable for the relation between SHE and device integration scale.
实验观察到质子也可以导致存储器出现单个位的硬错误和器件功能错误，并对单个位的硬错误与器件集成度的关系提出了合理的解释。
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