The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs).

应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。

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All byte wide memories have standard SRAM pinouts. they operate like SRAMs and provide nonvolatile storage with no requirement for battery backup.

所有字节宽度的存储器都有标准SRAM脚位输出，他们操作方式跟SRAM一样，并且提供非易失性存储，无需后备电池。

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Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).

描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。

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The test chip will enable the correlation of the simulation models to the FinFET process and contains test structures, standard cells, a PLL and embedded SRAMs. The memory instances include high-density SRAMs designed to operate at very low voltages and high-speed SRAMs to validate the process performance.

ENGADGET: Samsung reveals its first 14nm FinFET test chip, should offer substantial power improvements in future silicon