Through testing and analysing on the optoelectronic properties of them, effects of sputtering temperature on TiOx thin films were discussed.
通过对其光电性能的分析测试，探讨了溅射温度对氧化钛薄膜性能的影响。
The third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the PCR reaction.
第三，用溅射、光刻等工艺在微型腔体底部制作微型加热器和温度传感器，实现对反应腔体的加热及其温度的精确测量，提供PCR扩增反应所需的温度条件。
A novel low temperature switch material VO2 thin film was fabricated by ion-sputtering and annealing.
采用离子束溅射和退火工艺制备了一种新的相变型薄膜vo2。
The results indicate that the surface quality, FD and resistivity of the film increase with the sputtering time, but decrease with the Annealing temperature.
随着退火温度的上升，薄膜表面质量下降，分形维和电阻率也随之降低。
A1N films grown by low temperature reactive r. f. sputtering are investigated with spectrum analysis.
本文用光谱分析的方法研究低温反应射频溅射生长的A1N薄膜。
Based on the low evaporation temperature of organic semiconductors, a radioactive heater-crucible assembly was developed for vacuum evaporation coating and sputtering coating systems.
针对有机半导体材料的蒸发温度低的特点，设计并制作了低温辐射式加热器。
ZnO: Al thin films were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature.
采用直流磁控溅射工艺，室温下在载玻片上制备了氧化锌铝透明导电薄膜。
High quality nickel films have been successfully plated on cenosphere particles by dc magnetron sputtering at mom temperature.
本文论述了在空心微珠表面磁控溅射镀金属薄膜的方法。
This paper studies the nucleation mechanism of the target-facing sputtering, and the variation of island-density with such parameters as deposition time and substrate temperature.
本文研究了对向靶溅射薄膜的成核机理。给出了在薄膜的生长初期基板上的岛密度随生长条件（如沉积时间、基板温度）的变化。
Comparing with the conventional electrochemical deposition, room temperature sputtering method, the platinum loading was dramatically lowed, which reduced the cost of the NDSC.
与常用的电镀法和室温溅射法相比，大幅度的降低了电极的载铂量，减小了电池的制作成本。
The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
The appropriate sputtering time, sputtering power and annealing temperature are needed for improving the quality of films fabricated by ms.
合适的溅射时间、溅射功率和提高退火温度是改善磁控溅射成膜的关键。
Uses: sputtering target, physical vapor deposition, high temperature alloys.
溅射靶材、物理气相沉积、高温合金。
After sputtering with N-Cr, a microstructure of temperature-sensitive sensor was formed, and its character of R-T and thermal response time constant were measured.
然后在微桥上溅射镍—铬电阻薄膜，形成温敏传感器微结构，并对其温度电阻特性，热响应时间进行了测量。
Uses: sputtering target, physical vapor deposition, high temperature alloy for high-voltage vacuum switch contacts and precision alloy additives.
用途：溅射靶材、物理气相沉积、高温合金、用于高压真空开关触头及精密合金添加剂。
During deposition process, the temperature of target increases for the bad cooling condition which increase the sputtering rate, so the metallic state sputtering is formed.
分析认为，在大电流、散热不良的情况下，靶面温度升高会极大增高靶材的被溅蚀速率，从而呈现金属态沉积。
In particular, the amorphous titanium oxide is obtained by using the reactive sputtering method and via deposition at a low temperature and at a high film formation rate.
特别是利用反应性溅射法，在低温下以高成膜速度进行堆积，得到非晶的氧化钛。
In particular, the amorphous titanium oxide is obtained by using the reactive sputtering method and via deposition at a low temperature and at a high film formation rate.
特别是利用反应性溅射法，在低温下以高成膜速度进行堆积，得到非晶的氧化钛。
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