Uses: sputtering target, physical vapor deposition, high temperature alloys.
溅射靶材、物理气相沉积、高温合金。
The thickness uniformity of films deposited by planar magnetron sputtering target was analyzed theoretically.
从理论上分析了平面磁控溅射靶沉积薄膜的厚度均匀性。
A new net-shape cathode sputtering target which has a simple structure and a high sputtering rate was put forward.
设计了一种网状阴极溅射靶，它是由多个空心阴极并列交叉组合而成。
Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target.
本发明提供一种焊接溅镀靶材以形成一大的溅镀靶材的方法。
The invention relates to a device for improving utilization rate of a high vacuum ion beam sputtering target material.
本发明涉及一种高真空离子束溅镀靶材利用率增强装置。
A new multiple hollow cathode sputtering target which has a simple structure and a high sputtering rate, was put forward.
研制了一种由多个空心阴极并列组合而成的可直接作为溅射靶的多重空心阴极溅射靶。
This revolving target improved on the usage of target material and uniformity of film thickness comparing with conventional cylindric magnetron sputtering target.
与常规的圆柱形磁控溅射靶相比较，该旋转式靶提高了靶材利用率和膜厚均匀度。
This revolving target improved on the usage of target material and uniformity of film thickness comparing with conventional cylindric magnetron sputtering target.
与常规的圆柱形磁控溅射靶相比较，该旋转式靶提高了靶材利用率和膜厚均匀度。
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