Using X-ray diffraction technique, the process of the crystal growth of metal ultrafine particles, which are prepared by sputtering method and deposited on the silica! Substrate, have been researched.
利用X -射线衍射技术对溅射沉积在非晶二氧化硅基底上的金属晶体超微粒的生长特性进行实验研究。
Disclosed is a sputtering film-forming apparatus which is capable of forming a metal compound film with good characteristics at higher film-forming rate by a simple process at low cost.
提供能够以更快的成膜速度形成具有良好特性的金属化合物膜，并且能够简单地、低成本地构成的溅射成膜装置。
The evaluating method of sputtering cleanout effect on metal target surface by volt-ampere characteristic of target cathode has been given, which provides effective approach to eliminate...
给出了金属靶阴极表面溅射清洗效果的伏安特性评价法，为克服“靶中毒”提供了有效的技术途径。
With the increasing of sputtering time or the increasing of sputtering power or the decreasing of the particle loading amount, both crystallization and grain size of metal film were improved.
溅射时间越长或溅射功率越大或装载量越少，薄膜的平均厚度越厚，薄膜表面越粗糙，金属薄膜的结晶度就越高。
Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor.
在金属膜电阻器的生产过程中，靶材是非常关键的，它制约著金属膜电阻器的精度、可靠性、 电阻温度系数等性能。
The heating equipment of vacuum sputter coating apparatus always sparks during sputtering, Using metal-screening and surface earth can solve this problem well.
真空溅射镀膜设备中加热装置在镀膜时常出现打火现象，本文采用金属屏蔽和外壳接地的方法很好地解决了这一问题。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
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