Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。
Several methods manufacturing the SOI(simulator on silicon) materials are described and the main application fields of SOI devices are presented.
介绍了SOI材料的几种制备技术及SOI材料的主要应用领域。
If we select substrate temperature, laser power and the scan speed properly, we can get good crystallization. It is useful to the fabrication of SOI devices.
适当选择衬底温度、激光功率和扫描速度可望获得良好的结晶，它对SO I器件的制作是有意义的。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
It is confirmed in this work that SOI technology has a bright future in the area of development and production of semiconductor circuits and devices.
肯定了SOI结构在半导体电路和器件研制、生产中具有重要的发展前景。
This dynamic body discharge technique eliminates body potential mismatches of PD SOI CMOS devices, achieving repeatable low threshold voltage and fast SRAM access time.
这种动态体放电的方法有效地解决了部分耗尽SOICMOS器件体电位不匹配的问题，得到了可重复性低阈值电压，提高了SRAM的读取速度。
Also, the PSD device structures based on SOI technology were suggested in order to improve the response speed of sensitive devices.
同时为提高器件的响应速度，提出了基于SOI技术的PS D器件结构。
Silicon-on-insulator (abbreviated as SOI) optical waveguide is the base of silicon-based optical waveguide devices and other integrated optical devices.
SOI光波导是硅基光波导器件的基础，也是实现其它集成光学器件的基础。
Silicon-on-insulator (abbreviated as SOI) optical waveguide is the base of silicon-based optical waveguide devices and other integrated optical devices.
SOI光波导是硅基光波导器件的基础，也是实现其它集成光学器件的基础。
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