The insulating layer is positioned on a first surface of the silicon substrate.
该绝缘层位于该硅基材的第一表面。
The silicon substrate also can be doped with proper carbon, nitrogen or oxygen, etc.
硅衬底中还可以掺入适量碳、氮或氧等。
These Q values are limited by the conductor resistance and eddy current loss in the silicon substrate.
这些Q值受到导体电阻和硅衬底的涡流损耗的限制。
For example, as shown in FIG. 8a, an oxide layer 810 optionally is patterned on a silicon substrate 820.
例如，如图8a所示，氧化层810选择性地在硅衬底820上形成图案。
In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate.
此外，缓冲层可以减少晶体管之间的设备和硅衬底平行的传导问题。
The electric element is positioned inside the silicon substrate and is exposed on a second surface of the silicon substrate.
该电性元件位于该硅基材内，且显露于该硅基材的第二表面。
It combines an Au microelectrodes array (AuMEA) with two light-addressable potentiometric sensors (LAPS) on a silicon substrate.
系统由一个电化学微电极阵列和两个光寻址电位传感器组成。
A layer of europium oxide red light luminescent thin film is deposited on one side surface of a single crystal silicon substrate.
在单晶硅衬底的一个侧面沉积有一层氧化铕红光发光薄膜。
The method is as follows: the surface of a silicon substrate adopts the three-layer metal wiring of metal 1, metal 2 and metal 3;
所述方法是：在硅基板的表面采用金属1、金属2和金属3三层金属布线；
Deposition of metallic nickel on silicon substrate by laser-enhanced electroless plating technique is reported for the first time.
利用激光诱导化学镀技术，首次在硅片上沉积出金属镍。
The silicon wafer comprises a silicon substrate, an insulating layer, at least one electric element and at least one perforating hole.
该硅晶片包括硅基材、绝缘层、至少一电性元件及至少一穿导孔。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
The results show that carbon nanotubes grown on porous silicon substrate are well aligned with uniform diameter and dispersed distribution.
结果表明，以多孔硅为衬底生长的碳纳米管管径均匀且离散分布，定向性良好。
The graphite-like film was prepared on silicon substrate by pulsed laser ablation, and the field electron emission from the film was measured.
利用脉冲激光烧蚀技术在硅衬底上制备了类石墨薄膜，以该薄膜为阴极进行了场致电子发射实验。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The approaches have been explored to reduce the bending of solar cell by adjusting the back electrode paste and the thickness of silicon substrate.
通过调整背电极浆料和电池基片厚度，探索了减少太阳电池弯曲度的途径。
Complex impendence techniques are used to analyze the humidity sensing mechanism of nanometer barium titanate humidity sensors on silicon substrate.
用复阻抗法对硅衬底纳米钛酸钡湿敏元件的感湿机理进行了分析讨论。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
The temperature distributing of micro-structure gas sensor based on silicon substrate is simulated by means of finite element analysis (FEA) tool ANSYS.
利用有限元分析工具ANSYS，对所设计的硅基微结构气体传感器的温度场进行了模拟。
Then three kinds of films are acquired: silicon film on the surface of glass, the film on silicon target and transferred film on another silicon substrate.
这样我们得到了三种薄膜：玻璃表面的硅薄膜、硅靶上的薄膜和转移到硅基底上的薄膜。
In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.
此外，缓冲层地址和缓解晶格薄膜之间的不匹配而相对形成晶体管和硅衬底上。
SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
The invention discloses a method for growing a gallium nitride membrane on a silicon substrate, which comprises the following steps: selecting the silicon substrate;
本发明公开了一种在硅衬底上生长氮化镓薄膜的方法，包括如下步骤：选择硅衬底；
Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.
通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。
Laser is used as active light source for the first time in photoeleotrochemioal image deposition on P-type silicon substrate, and pictures with clear structures are obtained.
本文首次用激光作激励光源，在P型硅片上成功地进行了光电化学成像沉积，得到层次清晰的图像。
The results show that the dynamic hybrid ion implantation deposition technology has remarkable results for improving the performance of combination between film and silicon substrate.
对比分析结果表明，动态混合离子注入沉积工艺对提高膜层与基体的结合性能效果显著。
It was found that the composite films on the hydroxyl-terminated silicon substrate showed better tribological properties as compared to potassium stearate films under relative lower load.
结果表明，在相对较低的载荷下，复合薄膜比硬脂酸钾薄膜具有更好的摩擦学性能。
It was found that the composite films on the hydroxyl-terminated silicon substrate showed better tribological properties as compared to potassium stearate films under relative lower load.
结果表明，在相对较低的载荷下，复合薄膜比硬脂酸钾薄膜具有更好的摩擦学性能。
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