Chemomechanical polishing(CMP)technology of silicon substrate inULSI is introduced in this paper.
介绍了特大规模集成电路(ULSI)硅衬底的化学机械抛光工艺。
参考来源 - ULSI硅衬底的化学机械抛光技术·2,447,543篇论文数据,部分数据来源于NoteExpress
It combines an Au microelectrodes array (AuMEA) with two light-addressable potentiometric sensors (LAPS) on a silicon substrate.
系统由一个电化学微电极阵列和两个光寻址电位传感器组成。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
The results show that carbon nanotubes grown on porous silicon substrate are well aligned with uniform diameter and dispersed distribution.
结果表明,以多孔硅为衬底生长的碳纳米管管径均匀且离散分布,定向性良好。
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