The principles, design method and process of PHEMT frequency doubler are presented particularly.
其中重点论述了有源倍频器的工作原理、设计方法以及详细的设计过程。
Firstly, with the I-V curve and s parameters of the PHEMT, it's nonlinear equivalent circuit is fitted.
首先利用厂家提供的PHEMT直流i -V特性曲线及小信号s参数得出了其非线性等效电路模型。
These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.
结果表明EEHEMT 1模型可以用于提取增强型PHEMT参数，并且具有可操作性。
While the gate length of PHEMT device is adequately short, the parasitic resistance across the width of the gate limits the PHEMT device performance.
当PHEMT器件的栅长缩短到足够短的时候，沿着栅宽方向的寄生电阻会影响PHEMT器件的性能。
While the gate length of PHEMT device is adequately short, the parasitic resistance across the width of the gate limits the PHEMT device performance.
当PHEMT器件的栅长缩短到足够短的时候，沿着栅宽方向的寄生电阻会影响PHEMT器件的性能。
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