Wafer pairs with bonding interface being native oxide or thermal oxide have different bonding behavior in the annealing process, which were investigated and compared.
将硅本征氧化层与硅热氧化层两种键合界面在退火过程中的行为进行了理论分析与比较。
Wafer pairs with bonding interface being native oxide or thermal oxide have different bonding behavior in the annealing process, which were investigated and compared.
将硅本征氧化层与硅热氧化层两种键合界面在退火过程中的行为进行了理论分析与比较。
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