Common materials for the MTJ include chromium dioxide and iron-cobalt alloys.
制作磁隧道结的通用材料有二氧化铬和铁钴合金。
Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied.
研究MTJ样品的隧道结磁电阻(TMR)效应。
The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface.
在一实施例中，磁穿隧接面组件包含具有一第一表面区域的一第一表面，且电极包含一第二表面。
This API enables any third-party tools developers to extend MTJ to support their own platforms and also to support SDK-specific features.
这个API让任何第三方工具开发人员都可以扩展MTJ，以支持他们自己的平台以及支持特定于 SDK 的特性。
More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure.
更具体，MT J结构可以在半导体衬底上，以及数字线可以邻近磁隧道结结构。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
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