Common materials for the MTJ include chromium dioxide and iron-cobalt alloys.
制作磁隧道结的通用材料有二氧化铬和铁钴合金。
Tunneling magnetoresistance (TMR) effect of MTJ samples has been successfully studied.
研究MTJ样品的隧道结磁电阻(TMR)效应。
The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
应用推荐