Therefore, the test of electrostatic discharge has already been an important item in the evaluation of the MOS device′s reliability.
因此，静电放电测试已经成为对器件可靠性评估的一个重要项目。
With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。
This paper proposed a kind of novel micro magnetic sensor array based on a so-called MOS hall element, which is a MOS device in fact, but works as a hall element.
介绍了一种新颖的磁性传感器阵列，它由制作在硅板上的MOS霍尔器件和控制单元构成。
The bulk potential modulator can realize real-time modulation to parameters of the target MOS device, thus greatly weakening the influence of technological deviation.
体电位调制器能够实现对目标MOS器件参数的实时调制，极大地减弱了工艺偏差的影响。
Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.
光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。
The neuron MOS transistor is a recently invented device with high functionality.
神经mos晶体管是最近几年才发明出来的一种高功能度的器件。
Finally, the operation precision of the device is analyzed, the conclusion that the parasitical capacitor of the MOS transistor is the main factor to affect the precision is obtained.
最后通过对器件运算精度的分析，得出其运算精度主要受MOS晶体管寄生电容等因素的影响。
The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.
以及一电压提升装置，用以控制该第一MOS晶体管及该第二MOS晶体管的栅极；
The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation.
神经mos晶体管是一种具有多输入栅加权信号控制和阈值可调控的高功能度的新型器件。
The neuron MOS transistor is a recently discovered device which is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of summation.
神经mos晶体管是一种具有多输入栅加权信号控制和阈值可调控的高功能度的新型器件。
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