The invention can greatly improve the quality and reliability of the MOS capacitor.
采用本发明可大大提高MOS电 容的质量和可靠性。
Moreover, we done the same experiment on the (110) orientation Si and discuss flat-band voltage shift of MOS capacitor under biaxial strain.
此外，我们也在(110)方向的矽基板上作了相同的实验，并且讨论其在双轴的伸展应力下金氧半电容的平带电压的移动情况。
The experimental results show that for the same MOS capacitor sample the obtained values of generation lifetime from varying association of voltage sweep rates are close each other.
实验结果表明，对于同一个MOS电容器样品，从不同电压扫描率组合得到的产生寿命值基本一致。
TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度及累积失效率的方法。
Full-differential structure and bottom plane sampling technique and optimization of switch capacitor and MOS switch were used in this circuit.
设计中采用全差分结构和底极板采样技术，优化了开关电容和MOS开关。
Finally, the operation precision of the device is analyzed, the conclusion that the parasitical capacitor of the MOS transistor is the main factor to affect the precision is obtained.
最后通过对器件运算精度的分析，得出其运算精度主要受MOS晶体管寄生电容等因素的影响。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
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