The invention can greatly improve the quality and reliability of the MOS capacitor.
采用本发明可大大提高MOS电 容的质量和可靠性。
The experimental results show that for the same MOS capacitor sample the obtained values of generation lifetime from varying association of voltage sweep rates are close each other.
实验结果表明，对于同一个MOS电容器样品，从不同电压扫描率组合得到的产生寿命值基本一致。
TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度及累积失效率的方法。
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