A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided.
本发明公开了一种磁性存储器及其制造方法与写入方法。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors, read head for high density magnetic recording and magnetic random access memory.
介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
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