A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided.

本发明公开了一种磁性存储器及其制造方法与写入方法。

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This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors, read head for high density magnetic recording and magnetic random access memory.

介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。

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This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.

介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。

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This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.

介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。

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