The sensor is fabricated by traditional lithography and etching.
制作采用的是传统的光刻、刻蚀工艺。
Using MEMS technics to process the silicon vibration element, in the process two side lithography and etching has being used many times.
介绍了旋转载体用硅微机械陀螺敏感元件的结构和利用双面多次光刻、腐蚀等微机械工艺加工得到硅振动单元的工艺过程。
Some polymer materials are used as substrate. Kinds of new microfabrication technology are presented, including lithography, soft etching, LIGA, DEM and bonding, etc.
系统介绍了芯片实验室的各种制备技术，这些技术包括紫外光刻、软刻蚀、LIGA技术、DEM技术、键合等。
Three solutions of optimization of experimental parameters, adding beam mask and using etching technologies for improving atom lithography quality are presented.
提出了优化实验参数、增加束掩模和利用刻蚀技术三种改善原子光刻实验的方法。
We fabricate desired structured surfaces by holographic lithography, plasma etching and Teflon coating. The performance is evaluated by measuring the reflectance spectrum and contact angle.
实验上，我们采用全像微影术、电浆蚀刻以及旋镀铁氟龙的方式来制作试片，并量测该试片的反射频谱和接触角。
UV lithography, silicon etching and soft lithography were adopted to fabricate micropillar arrayed cell culture substrates.
以紫外光光刻、硅蚀刻及软光刻技术制备了微柱阵列型细胞培养基底。
The prototype features a unique 3D air-breathing cathode structure fabricated using KOH etching and double-side lithography.
其特点在于，利用KOH体硅腐蚀和双面光刻工艺制作了一种独特的三维自吸氧阴极结构。
The fabrication methods of MPC include electron beam lithography with subsequent evaporation and lift-off, interference lithography with dry-etching technology etc.
制备金属光子晶体方法包括：电子束刻蚀结合后续剥离法、激光干涉光刻结合干刻蚀技术等。
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
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