• When a backward biasing voltage is applied, the thickness of a depletion layer formed is made large, so that generation of hot carriers is minimized.

    当施加反向偏置电压时,形成的耗尽层厚度变大,从而使热载流子的产生减到最小。

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  • A second biasing structure having a second magnetization vector is positioned within the sensor stack relative to the sensing layer to counter the biasing field at a center of the sensing layer.

    以及第二偏置结构,具有第二磁化矢量,相对于检测层定位在传感器叠层中,用来对抗在检测层的中心部分的偏置场。

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  • A first biasing structure having a first magnetization vector is positioned adjacent to the sensor stack to produce a biasing field that biases the sensing layer.

    第一偏置结构,具有第一磁化矢量,定位于临近传感器叠层,用来产生偏置检测层的偏置场;

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  • A first biasing structure having a first magnetization vector is positioned adjacent to the sensor stack to produce a biasing field that biases the sensing layer.

    第一偏置结构,具有第一磁化矢量,定位于临近传感器叠层,用来产生偏置检测层的偏置场;

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