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When a backward biasing voltage is applied, the thickness of a depletion layer formed is made large, so that generation of hot carriers is minimized.
当施加反向偏置电压时，形成的耗尽层厚度变大，从而使热载流子的产生减到最小。
A second biasing structure having a second magnetization vector is positioned within the sensor stack relative to the sensing layer to counter the biasing field at a center of the sensing layer.
以及第二偏置结构，具有第二磁化矢量，相对于检测层定位在传感器叠层中，用来对抗在检测层的中心部分的偏置场。
A first biasing structure having a first magnetization vector is positioned adjacent to the sensor stack to produce a biasing field that biases the sensing layer.
第一偏置结构，具有第一磁化矢量，定位于临近传感器叠层，用来产生偏置检测层的偏置场；
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