The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
分析了W -CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。
Secondly, parameters must be optimized in lapping process as follows: pressure, rotation, slurry concentration, flow, time.
在研磨工艺中，研磨压力、磨盘转速、磨液浓度、流量大小、研磨时间必须有效配合；
Secondly, parameters must be optimized in lapping process as follows: pressure, rotation, slurry concentration, flow, time.
在研磨工艺中，研磨压力、磨盘转速、磨液浓度、流量大小、研磨时间必须有效配合；
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