The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.

方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。

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The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.

方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。

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