In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.
为了更直观地描述低压大电流VDMOS器件特性，对器件栅电荷特性进行了测量和提取。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
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