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The charge injection is modulated by the gate field.
通过所述栅极场来调制电荷注入。
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The charge trapping structure is disposed between the gate and the fin structure.
电荷陷入结构设置于栅极与鳍状结构之间。
youdao
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The charge trapping structure is disposed between the gate and the fin structure.
电荷陷入结构设置于栅极与鳍状结构之间。
youdao