Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
The subtle interactions between magnetohydrodynamics and high-frequency plasma waves involving transverse and longitudinal modes are investigated.
本文研究了磁流体力学与高频等离子体波(包括纵横模式)之间的精巧的相互作用。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
The paper discusses the design of the experiment of low press radio-frequency plasma, using TFS and Langmuir to get V-Icurve including temperature of plasma body.
文章提出了低压射频等离子体实验设计体系，应用飞行时间谱仪和Langmuir单探针，测得Langmuir型V - I曲线，其中包括等离子体温度信息。
Conclusion Radio frequency plasma-assisted tonsillectomy is a safe and effective procedure with less pain and a higher cost compared with conventional tonsillectomy.
结论等离子射频辅助扁桃体切除术安全有效，疼痛减少，但费用较高。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
The dispersion relation for the low-frequency plasma interchange modes in a hot-electron plasma with line-tying function is solved by using the MHD equ. of multiple species.
用多组份磁流体力学方程导出了有线捆作用的热电子等离子体中，低频等离子体交换模的色散关系；
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
In basis of analyzing the features of the conventional arc welding technology, a DC low-frequency plasma welding power with fusion penetration is selected as the heat source for metal forming.
本课题在分析常规弧焊技术特点的基础上，选取熔透式低频直流等离子弧焊电源作为成形的热源。
Objective to compare the advantages and disadvantages of low temperature radio frequency plasma-assisted tonsillectomy and conventional tonsillectomy for school age children at the age of 7-14 years.
目的比较7 - 14岁学龄儿童行低温等离子射频辅助扁桃体切除术与常规剥离法扁桃体切除术的优缺点。
Because of their inertia, the electrons will overshoot and oscillate around their equilibrium positions with a characteristic frequency known as the plasma frequency.
因为电子的惯性，它们将冲过平衡位置，并以特征频率围绕它们的平衡位置振荡。
The effect of plasma thickness, wave frequency, electron number density distribution on it is almost independent of the wave polarizing direction.
等离子体厚度、入射波频率、电子数密度分布对功率反射系数的影响几乎与波的极化方向无关。
However, phase speed depends on plasma frequency and structure dimension, and very slow waves can exist in very small sized waveguide.
然而，波的相速依赖于等离子体频率和结构尺寸，并且非常慢的波可以存在于非常小尺寸的波导中。
The pass band of this mode is from static to plasma frequency, and does not depend on structure dimension.
这一模式的通带从零到等离子体频率，而且不依赖于结构尺寸。
This paper discussed the dependence of the characteristic value of characteristic equation on frequency for the given precise characteristic equations of plasma cylindrical waveguides.
通过给出的等离子体圆柱波导的精确特征方程，讨论了特征方程的特征值对频率的依赖。
The designing parameters of high frequency transformer and the protecting IGBT in plasma spraying inverter with high voltage and large current is analyzed in this paper.
分析了等离子喷涂逆变器在高电压大电流条件下，高频变压器参数设计和IGBT保护问题。
B solution, the function of wave attenuation, wave frequency and plasma density is deduced.
解，推导出电磁波能量衰减与电磁波频率和等离子体密度的关系式。
Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
Finally, the optimal electron collision frequency of the non-magnetized plasma is presented.
最后，给出了非磁化等离子体的最佳碰撞频率。
The electron collision frequency is one of the important parameters of the non-magnetized plasma. It plays an important role in the interaction of the plasma with electromagnetic waves.
电子碰撞频率是非磁化等离子体的一个重要参数，它对等离子体与电磁波相互作用的性质具有较大影响。
The electronic collisional frequency and magnetic inductive intensity are important parameters of plasma for adjusting the reflectance.
等离子体的电子碰撞频率和磁感应强度是调节等离子体反射率的重要参量。
It is analyzed by numerical computation that the temporal growth rates and the frequency of PASOTRON are affected by the filling factor of plasma.
并通过数值计算分析了等离子体填充因子对PASOTRON的时间增长率及工作频率的影响。
To create plasma, they applied an oscillating (radio frequency) electric field to the gas using two disk-shaped electrodes located near the top and bottom of the chamber.
为了制造等离子体，他们还在容器上下两个表面安上了电极，加上了射频震荡电场。
A stable plasma in the mirror is produced by using microwave with magnetron at electron cyclotron frequency.
利用工作于电子回旋频率的磁控管发射的微波功率在磁镜中产生了稳定的等离子体。
In this paper, the effects of critical electron density of plasma and the plasma frequency of electron on the refraction, absorption and reflection of the electromagnetic wave are studied.
着重研究了等离子体临界电子密度、电子等离子体频率等参数对电磁波的折射、吸收、反射的影响。
It has been shown that when the RF frequency is less than the ion plasma frequency, the ion flux density will strongly depend on the time.
结果表明，当射频场的频率小于或等于离子等离子体频率时，离子流密度明显地随时间变化。
When the external RF frequency is much bigger than ion plasma frequency, ions answer average field.
当外加射频频率远大于离子等离子体频率，离子响应平均场，离子的密度分布几乎不随时间变化；
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
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