• The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.

    第一个重要的来自热氧化组薄膜是栅氧化层,在它之下,源和漏之间就能形成导电通道。

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  • A spacer (23) is formed on only the drain side of the electrode.

    只在该栅电极的漏侧形成一个隔层(23)。

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  • A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.

    源区和漏区形成在鳍部内栅极的相对侧处。

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  • The oxide layer is formed on the two-step diffusion drain electrode structural layer and completely superposed on the two-step diffusion drain electrode structural layer.

    氧化层是形成于双重扩散漏极结构层上,且氧化层完全重叠于双重扩散漏极结构层上。

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  • The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.

    所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。

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  • Drain holes are respectively formed on two sides of the groove of the washing tank body.

    洗涤槽本体凹槽两侧各有一个下水孔。

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  • Drain holes are respectively formed on two sides of the groove of the washing tank body.

    洗涤槽本体凹槽两侧各有一个下水孔。

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