The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
A spacer (23) is formed on only the drain side of the electrode.
只在该栅电极的漏侧形成一个隔层(23)。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
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