Because the etched pattern will be effected by many factors, many technical difficulties such as getting the ideal etched pattern and monitoring the etching process have not been solved yet.
因影响半导体激光诱导液相腐蚀效果的因素很多，要得到理想的腐蚀图样以及监控腐蚀进程有着很大的技术难度，至今没有得到有效解决。
The influence of quadratic effect of ion-beam etching on pattern profile and the influence of ion-beam etching incidence Angle on slope of pattern sidewall are studied.
介绍了离子束刻蚀的二次效应对图形轮廓以及离子束刻蚀入射角对图形侧壁陡度的影响。
The influence of quadratic effect of ion-beam etching on pattern profile and the influence of ion-beam etching incidence Angle on slope of pattern sidewall are studied.
介绍了离子束刻蚀的二次效应对图形轮廓以及离子束刻蚀入射角对图形侧壁陡度的影响。
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