Three solutions of optimization of experimental parameters, adding beam mask and using etching technologies for improving atom lithography quality are presented.
提出了优化实验参数、增加束掩模和利用刻蚀技术三种改善原子光刻实验的方法。
Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.
采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。
Then, a micro exhaust duct was etched on an electroforming deposit through mask etching technology.
然后利用掩膜腐蚀方法在铸层上腐蚀出微排气通道。
Then, a micro exhaust duct was etched on an electroforming deposit through mask etching technology.
然后利用掩膜腐蚀方法在铸层上腐蚀出微排气通道。
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