High-purity 1,1-difluoroethane usable as a cryogenic refrigerant, or as an etching gas, can be produced in an industrially advantageous manner.
可以以在工业上有利 的方式生产可用作低温制冷剂或蚀刻气体的高纯度1，1-二氟乙烷。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.
分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响；
The result indicates that there are obvious differences between CO2 and CH4 gas reservoirs on value of thermal etching carbonate, fluorescence spectrum and CO2 gas content in Huagou area.
结果表明，花沟地区的CO2气和CH4气具有不同的地球化学指标组合异常特征，在热蚀碳酸盐、荧光光谱及CO2气含量等指标上有明显的差异。
This paper studies on the mechanism of acid etching and effect of high temperature and high pressure gas produced by HEGF acting on reservoirs by means of experiment.
用实验的方法研究了高能气体压裂产生的高温高压气体对地层的酸蚀机理、效果。
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。
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