Epitaxy of strained Si on the obtained SGOI substrate.
在获得的SGOI衬底材料上生长高质量应变硅材料。
Single Crystal, Substrate, Optico-Electronics, Film, Epitaxy.
单晶，衬底，光电子，薄膜，外延。
The higher value is comparable to those obtained in CVD epitaxy.
这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
The environmental morals have their intension, the epitaxy and main content.
环境道德有其内涵、外延和主要内容。
The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
外延沉积接着用以形成一外延层于该外延表面上。
Firstly, the theory and fabrication of molecular beam epitaxy are described in detail.
本文首先详细介绍了分子束外延设备的原理和构造。
Chemical beam epitaxy (CBE), a novel technique for thin-film crystal growth, is introduced.
本文介绍了薄膜晶体生长的最新技术——化学束外延(CBE)。
In this paper, an experimental apparatus for the low pressure epitaxy of silane is described.
本文介绍了硅烷低压外延的实验装置。
Finally, some reference criteria for the quality inspection of epitaxy chip materials are given.
最后给出了几个外延晶片材料质量评估的参照标准。
A brief review is given to the present status and prospect for atomic layer epitaxy (ALE) technique.
综述了原子层外延(ale)技术的现状及其发展趋势。
In addition, such preparation methods as molecular beam epitaxy and laser ablation also see some applications.
此外，分子束外延生长、激光消融等制备方法也有一定的应用。
The epitaxy experiments are arranged to take advantage of the mathematical method of orthogonal process design.
采用“正交设计”的数学方法安排外延试验，找到多层连续均匀生长的条件。
The design and technical points of a molecular beam epitaxy apparatus with metal-organic source were described.
本文报道了金属有机源分子束外延设备的设计方案和技术特点。
This thesis focuses on growth mechanism of SiC homogeneity epitaxy and electrical characterization methods of epilayer.
本文对同质外延碳化硅单晶材料的生长机理和外延生长层的表征方法进行了研究。
Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。
Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community.
瑞博是一个制造分子束外延设备的公司，其设备在化合物半导体领域处于领先地位。
Beautiful outdoor advertising creativity, design and materials, the performance of the process should show a rich cultural epitaxy.
优美的户外广告创意、设计及材料、工艺的表现应表现出丰厚的文化外延。
The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs l...
结果表明，低温外延是制备较高质量外延层的一种可取方法。
The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.
结果表明，低温外延是制备较高质量外延层的一种可取方法。
The materials of semiconductor hetero-epitaxy and quantum dots are widely used in the fields such as nano-electronics and optoelectronics.
半导体异质外延材料和量子点材料在纳米电子学、光电子学中具有广泛的应用前景。
The tool and humanity of Chinese all determine Chinese and life coexist, the epitaxy of Chinese study and epitaxy of social life are equal.
语文的工具性和人文性都决定语文与生活同在，语文学习的外延与社会生活的外延是相等的。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
In this paper is reported the design and the settlement of an experimental simulation system of molecular beam epitaxy applied to physics researches.
本文报道了一台用于物理研究的分子束外延模拟实验装置的设计和调试。
Epitaxy: Concerns/ constraints- lattice-matched systems; strained layers( pseudomorphic)- limits of thickness; impact of strain on bands, properties.
磊晶：关键与限制-晶格匹配之材料系统；应变层（晶）-厚度上限；应力对能带的影响，特性。
These devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.
这些设备是利用分子束外延制备的制造技术和坚固的结构和功能一致的电气性能。
Described is a method of purifying a quartz processing vessel used in the production of semiconductors and more particularly for epitaxy from the gaseous phase.
描述的是一个净化石英加工船用于外延在半导体生产和更特别是从气相方法。
The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.
再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。
Some double crystal rocking curves of photocathode epitaxy materials and substrates are measured by means of X-ray double crystal diffraction in the bonding process.
用X射线双晶衍射仪测量了阴极和玻璃热粘结工艺过程中阴极材料外延层和衬底的双晶回摆曲线。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
应用推荐