The methods for increasing the doping level of bittern are proposed as well as the problems for…
同时提出了提高掺卤量的方法和应注意的问题。
These devices have optical waveguide structure, moderate doping level and active layer thickness.
该器件带有光波导结构并具有适当掺杂和有源层厚度。
The methods for increasing the doping level of bittern are proposed as well as the problems for attention.
同时提出了提高掺卤量的方法和应注意的问题。
But too high thickness and doping level will do harm to the smoothness of film surface with doped impurity deteriorating the crystallization.
但是薄膜厚度的增大和掺杂浓度的提高会恶化膜面的平整度，同时过量的掺杂也会影响薄膜的结晶性能。
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
Given the same sintering condition, doping with higher level of the vapor B2O3 source results in the higher PTCR effect.
同样的烧结条件下，钛酸钡陶瓷的PTCR效应随b 2 O 3蒸汽掺杂源的浓度升高而升高。
Given the same sintering condition, doping with higher level of the vapor B2O3 source results in the higher PTCR effect.
同样的烧结条件下，钛酸钡陶瓷的PTCR效应随b 2 O 3蒸汽掺杂源的浓度升高而升高。
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