These devices have optical waveguide structure, moderate doping level and active layer thickness.

该器件带有光波导结构并具有适当掺杂和有源层厚度。

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The methods for increasing the doping level of bittern are proposed as well as the problems for attention.

同时提出了提高掺卤量的方法和应注意的问题。

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But too high thickness and doping level will do harm to the smoothness of film surface with doped impurity deteriorating the crystallization.

但是薄膜厚度的增大和掺杂浓度的提高会恶化膜面的平整度，同时过量的掺杂也会影响薄膜的结晶性能。

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But too high thickness and doping level will do harm to the smoothness of film surface with doped impurity deteriorating the crystallization.

但是薄膜厚度的增大和掺杂浓度的提高会恶化膜面的平整度，同时过量的掺杂也会影响薄膜的结晶性能。

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