A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
A lateral DMOS device having a structure that prevents breakdown of a semiconductor device while enhancing the breakdown voltage property.
一种横向dmos器件，具有防止半导体器件击穿同时增强击穿电压性能的结构。
Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2a of gate drive current.
无论是高边和低边输出，采用了集成的功率DMOS晶体管是能够采购和栅极驱动电流2a沉没的。
By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
Based on the transport mechanism of the single ion radiate plasma, the transient response model of single ion radiate the lateral high-voltage DMOS is proposed.
基于单粒子辐照的等离子体输运机理，提出了横向高压dmos单粒子辐照的瞬态响应模型。
Based on the transport mechanism of the single ion radiate plasma, the transient response model of single ion radiate the lateral high-voltage DMOS is proposed.
基于单粒子辐照的等离子体输运机理，提出了横向高压dmos单粒子辐照的瞬态响应模型。
应用推荐