The reliability of strain silicon, gate dielectric and copper interconnection are discussed, and some new researches are presented.
简介了应变硅材料、栅介质的工艺及铜互连的可靠性，并对新的研究方向做了介绍。
So he reached his hands to push the gate, which, heavy as if made of copper and iron, was not latched inside, and more strength, it was being opened slowly.
那门似是用铜铁铸成，甚是沉重，但里面并未闩上，手劲使将上去，那门便缓缓的开了。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
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