Copper alloy gate valves 铜合金闸阀
The reliability of strain silicon, gate dielectric and copper interconnection are discussed, and some new researches are presented.
简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
该技术将基于一个具有增强的高- k金属闸(HKMG平面工艺),新型应变硅,低电阻铜超低K互连。
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