The integration technologies of RTD with HEMT, HBT and CMOS devices are first introduced.
首先对RTD与化合物半导体HEMT,HBT以及硅cmos器件的集成工艺进行了介绍。
The high-voltage CMOS devices can be used in high-voltage integrated circuit(HV-IC) such as driver ICs for PDP and FED.
高压CMOS器件的研制可为进一步研制FED和PDP平板显示高压驱动电路奠定基础。
However, as the design rule continuously shrank down beyond the 45 nm, conventional planar CMOS devices encounter significant challenges.
不过，当设计规章向45奈米以下持续缩小时，传统的平面的电晶体将遇到很多显著的挑战。
This dynamic body discharge technique eliminates body potential mismatches of PD SOI CMOS devices, achieving repeatable low threshold voltage and fast SRAM access time.
这种动态体放电的方法有效地解决了部分耗尽SOICMOS器件体电位不匹配的问题，得到了可重复性低阈值电压，提高了SRAM的读取速度。
The multiplexer can be constructed from either mechanical switches or solid-state devices (such ad CMOS switches).
多路开关可以用机械开关或者固态器件（例如CMOS）开关构成。
DOC circuitry is designed to drive CMOS input devices, which are capacitive in nature, in point-to-point applications (one receiver input per driver output).
在点对点应用中(每驱动器输出对一个接收器输入)，设计DOC电路驱动原本为容性的CMOS输入的器件。
The prepared CMOS image sensor meets the requirement for technological parameters of devices, has high fill factor and effectively improves the image quality of the CMOS image sensor.
本发明制备得到的CMOS图像传感器满足器件工艺参数并且填充因子高，有效地提高CMOS图像传感器的图像质量。
These findings can provides a good reference value for the study of high power microwave (HPM) interference effects towards the CMOS digital circuit devices and systems.
总结出的这些效应规律可为了解和掌握CMOS数字电路器件与系统整体HPM效应机理规律提供一定的参考价值。
A systematic approach is used to analyze the noise in CMOS low noise amplifier (LNA), including channel noise and induced gate noise in MOS devices.
采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声，并提出了一个新的噪声系数解析式。
So in recent years, much of the research in optical computing has focused on finding CMOS-compatible ways to integrate electronic and photonic devices.
所以近几年来，许多关于光学运算的研究都专注于找出让光子元件与CMOS相容的技术，以整合电子与光子装置。
MM5483 is a monolithic integrated circuit utilizing CMOS metal-gate low-threshold enhancement mode devices.
MM5483是一款单片集成电路，采用CMOS金属栅极的低阈值增强模式器件。
MEMS devices with minimum volume and cost were realized by the embedded CMOS process.
通过这种嵌入式CMOS工艺技术，可以实现具备最小体积、最低成本的MEMS器件。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
垂直双极型晶体管(118)比CMOS晶体管(116)高。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
垂直双极型晶体管(118)比CMOS晶体管(116)高。
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