A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.
然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.
本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的基本长度被缩短以微型化半导体装置。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
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