A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.

一种半导体器件结构（10），其使用两个半导体层（16&20）以 分别优化N和P沟道晶体管载流子迁移率。

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They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.

然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。

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The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.

本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的 基本长度被缩短以微型化半导体装置。

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The greater the gate length, the slower the transistor, since electrons passing through the channel in the transistor (which is the same length as the gate) have further to travel.

ECONOMIST: Transistors: A tall story | The

Only when all the masking and etching is complete is the sacrificial gate layer dissolved away, allowing the gates (and the insulation layers between the gate and channel of each transistor) to be filled in.

ECONOMIST: Transistors: A tall story | The