High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
With the addition of an internal P-channel Power MOS, a coil, capacitors, and a diode connected externally, these ICs can function as step-down switching regulators.
内部P沟道功率MOS，线圈，电容和外接二极管此外，这些IC可以作为降压开关稳压器 。
Our results indicate that voltage-gated ion channel currents recorded by Clampex will be more accurate and reproducible by properly using P/N leak subtraction.
结果表明， 在采集电压门控性离子通道电流时，合理地利用P/N漏减会使离子电流记录更为准确可靠。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
Provides single channel "I to p" control for industrial applications requiring long life and high accuracy.
提供单通道“我为P”的要求，寿命长，精度高的工业应用控制。
Both single- and two-channel GES with long pulses were capable of normalizing gastric dysrhythmia (P<0. 01), but had no effect on vomiting-related symptoms (P>0. 05).
单导联和两导联长脉冲胃电刺激均能纠正胃电节律紊乱（P<0.01），但对呕吐相关样症状无明显缓解作用（P>0.05）。
Influence of different crystallizer and cover agents on surface quality of round Cu ingot with P deoxidation in channel induction furnace was expounded.
论述了有芯工频感应电炉生产磷脱氧铜圆锭不同结晶器和不同铸造保护气氛对铸锭质量的影响。
Robust time delay estimation method based on least mean p-norm blind channel identification(BCILMP) was proposed and applied to estimate the propagation velocities of GEA.
根据分数低阶统计量理论，本研究提出一种基于最小平均p范数盲信道辨识的韧性时间延迟估计算法（BCILMP），对胃电信号传导速率进行估计。
In chapter 5, the on-screen driving circuits composed of P-channel TFT have been designed, including inverter, shift register, transmission gate and simulated using simulation software.
第五章设计了全p沟道tft构成的屏上驱动电路，包括反相器、移位寄存器、传输门的设计，并用仿真软件进行了仿真验证。
I grew up in New York City so what is most memorable were the breaks on Channel 5 did: "it's 10 p. m., do you know where your children are?"
我成长在纽约市因此最记忆犹新的是五台的插播语：“现在是晚上10点整，你知道你的孩子在哪吗？”
When C4 does charge fully (the lower side reaches close to 0v), the P-channel MOSFET Q6 is turned on, effectively shorting out the motor, and acting as a brake.
当C4的不负责，充分(下侧达到接近0V)，P沟道MOSFET六题是开启，有效地缩短了汽车，和作为一个制动。
When C4 does charge fully (the lower side reaches close to 0v), the P-channel MOSFET Q6 is turned on, effectively shorting out the motor, and acting as a brake.
当C4的不负责，充分(下侧达到接近0V)，P沟道MOSFET六题是开启，有效地缩短了汽车，和作为一个制动。
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