High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
Our results indicate that voltage-gated ion channel currents recorded by Clampex will be more accurate and reproducible by properly using P/N leak subtraction.
结果表明, 在采集电压门控性离子通道电流时, 合理地利用P/N漏减会使离子电流记录更为准确可靠。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构(10),其使用两个半导体层(16&20)以 分别优化N和P沟道晶体管载流子迁移率。
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