The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.
增强的空穴沟道迁移率导致导通电阻的沟道部分减小，因此，有利地减少了装置的全“导通”电阻。
In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect.
模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等。
We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect.
在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。
This paper proposed a new Swan model, which takes such effects as capital mobility and balance sheet channel into consideration.
本文介绍了一个考虑了资本流动时竞争效应与平衡表效应的新斯旺模型。
The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.
采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
例如，通过在沟道中引入适当的压应力和张应力能分别提高PMOS的空穴迁移率和NMOS的电子迁移率。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
However, the mobility effect, unreliable wireless channel condition and limited available wireless spectrum resources are the bottleneck for large traffic transmission.
然而，终端的移动性，无线链路的低可靠性以及无线带宽资源的有限性等条件限制使得无线接入成为大数据量传输的瓶颈。
However, the mobility effect, unreliable wireless channel condition and limited available wireless spectrum resources are the bottleneck for large traffic transmission.
然而，终端的移动性，无线链路的低可靠性以及无线带宽资源的有限性等条件限制使得无线接入成为大数据量传输的瓶颈。
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